TECHNICAL PARAMETER
Single chamber magnetron sputtering systemĀ is used for the preparation of novel thin film materials such as nanometer single-layer and multi-layer functional film, hard film, metal film, semiconductor film and dielectric film. It can be widely used in the research of thin film materials and the production of small batch. It can be widely used in universities and colleges, scientific research institutes of thin film materials preparation research and small batch.
Single chamber magnetron sputtering system specifications:
Ā Vacuum chamber | Circular type vacuum Ā chamber,
size: Ć450Ć350mm |
|
Vacuum system configuration | Compound Ā molecular pump, mechanical pump, gate valve | |
ultimate pressure | ā¦6.67*10-5Pa(After baking Ā degassing) | |
Vacuum Ā recovery time | Up to 6. 6*10-4Pa Ā in 40 minutes. (the system briefly exposes the atmosphere and fills with dry Ā nitrogen to start pumping) | |
Magnetron Ā target component | 3 sets of permanent magnetic targets; target Ā sizeĆ60mm(one of Ā the targets can sputtering ferromagnetic material). The RF beach Ā and DC cutoff of each target are compatible; and the distance between target Ā and sample is adjustable from 90mm to 100mm; when direct upward sputtering, Ā the distance between target and samle is adjustable from 40mm to 80mm. | |
Water-cooling Ā Substrate Heating Revolution Table | Substrate Ā Structure | The substrate Ā heating and water cooling work independently, and the heating furnace can be Ā replaced by water cooling substrates |
Sample size | Ć30mm | |
Mode of motion | The substrate Ā can rotate continuously, and the rotation speed is 5-10 RPM | |
Heating | Max. Ā Temperature 600ā±1ā | |
Substrate Ā Negative Bias | -200V | |
Gas Circuit Ā System | 2-way Mass Ā Flow Controller(MFC) | |
Optional parts Ā 6 station base plate heating revolution table | Removing the single substrate, The water Ā heating platform can be replaced on the rotary table. 6 sheets of 30mm Ā substrates can be placed simultaneously; Among the six stations, one of them Ā is installed with heating furnace, while the rest are natural cooling Ā substrates. Maximum temperature of substrate heating: 600ā±1ā | |
Computer Ā Control System | Control sample Ā rotation, baffle switch, target identification, etc | |
Floor Occupied | Main Set | 1300Ć800mm2 |
Electrical Ā Cabinet | 700Ć700mm2 |
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